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InGaGdN single-layer and InGaGdN/GaN superlattice (SL) structures were grown on the MOVPE-grown GaN (0001) template substrates by radio frequency molecular beam epitaxy. X-ray diffraction spectroscopy and X-ray absorption fine structure data showed no existence of a secondary phase such as GdN or InN and the Gd atom occupation at the group-III site. Magnetization versus magnetic field curves exhibited...
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