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We have investigated the formation of Ge quantum dots (QDs) in SiO 2 /Si(001) windows prepared either by partial thermal desorption of an ultra-thin oxide layer, or by standard electron beam lithography. Prior to Ge growth, we studied the growth of a silicon buffer. It was shown that the growth of the Si buffer layers evolved towards truncated pyramids whose top area can be controlled via...
Field-dependent optical properties of wide band gap type II ZnSe/BeTe superlattices (SLs) are investigated by photoluminescence and electroreflectance. For a 40- 9 period SL, lattice matched to GaAs, the lowest spatially indirect transition is found in the visible spectral range at 2.04 eV at room temperature. By application of external voltages, U ext shifts of the transition up...
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