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AlInAs/InP HEMTs with extrinsic transconductances of 267 mS/mm at 300 K and 342 mS/mm at 77 K are reported. The corresponding intrinsic transconductance at 300 K is estimated to be 615 mS/mm. These 0.80 mu m gate length devices also exhibit high microwave gains with f/sub max/ as high as 65 GHz and f/sub T/ of 22 GHz. These are some of the best results reported for InP channel devices.<<ETX>>
The fabrication of the first AlInAs/InP HEMT is reported. This device has extrinsic transconductance of 40 mS/mm, gate-drain and drain-source breakdown voltages of 20 V and saturation drain current densities of 0.1 A/mm of gate width. These preliminary results show the potential of the AlInAs/InP heterojunctions for a wide variety of application including microwave power HEMTs.<<ETX>>
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