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Conditions for TiC epitaxial growth on 6Hα-SiC and β-SiC surfaces were established. The TiC epilayer defect structures and TiC/SiC interface properties were investigated in TiC/(0001)-6Hα-SiC, TiC/(111)-β-SiC and TiC/(110)-β-SiC structures. The TiC/SiC interfaces-annealed at 1300-1400°C-remained flat and free of titanium silicides. Threading dislocations were the only defects observed in TiC epilayers...
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