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We have investigated the effects of nitrogen in the Ga(N)As barrier of an 1.5-μm-emitting GaIn- NAsSb quantum well (QW) on the localization and the defect density. The QW with the GaNAs barrier emitted brighter photoluminescence at a longer wavelength at 10 K than the GaAs barrier and showed less carrier localization. The lifetime at 10 K was almost the same for the QWs both with and without nitrogen...
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