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The early stage of nanocrystallite silicon (nc-Si:H) growth from plasma-enhanced chemical vapor deposition (PECVD) was investigated through in-situ monitoring by UV-visible spectroscopic ellipsometry. The film structure was an amorphous up to about 500 thickness on SiO 2 substrate, which was very sensitive to the selection of the substrate including its surface roughness. Especially, the...
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