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This paper develops a new multiple-model based adaptive control scheme to compensate actuation sign uncertainty, which employs three steps: (1) design multiple estimators; (2) design multiple controllers using an error transformation relating to the output tracking error, the estimation error, and a virtual tracking error between the estimator state and the reference signal; and (3) design a control...
This paper proposed a novel dc-dc converter to achieve high step-up voltage gain without an extremely high duty ratio. The proposed converter controlled by only a single pulse width modulation (PWM) for the power switch. This thesis is a design of Boost-Forward-Flyback (BFF) converter with high voltage gain. The circuit structure is integrated by Boost, Forward and Flyback.The figuration of the proposed...
This paper is proposed a new type of equalization circuit. It is to implement active battery balance for Li-ion battery. The battery management system is designed for manage a 4-series-cell battery system; provide a voltage monitoring for each cell.
This paper provides a statistical analysis of different strategies for no load power transformer's controlled switching. Especially for the reclosing strategy with residual flux, the combined effects of mechanical timing deviation and pre-arc phenomenon have to be taken into account in the algorithm of optimum reclosing instant. Then, with a single phase power transformer model, we compare this strategy...
Power transformer's de-energization leaves the transformer core in a state of magnetization, called residual flux. The presence of this residual flux may induce inrush current which can cause damages on the equipments and system disturbances. In recent years, studies on power transformer's controlled switching have been carried out to reduce this effect. The purpose of this paper is to emphasize the...
This paper reports a 45 nm spin-transfer-torque (STT) MRAM embedded into a standard CMOS logic platform that employs low-power (LP) transistors and Cu/low-k BEOL. We believe that this is the first-ever demonstration of embedded STT MRAM that is fully compatible with the 45 nm logic technology. To ensure the switching margin, a novel "reverse-connection" 1T/1MT cell has been developed with...
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