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By using a frequency-tripled Nd:YVO4 laser source (355 nm) for drilling through-wafer via holes in SiC substrates, we can reduce the surface contamination and achieve better smoothness inside the via holes compared to use of the more common 1064-nm Nd:YVO4 laser. The sheet and contact resistance of AlGaN/GaN HEMT layers grown on SiC substrates were similar after formation of vias by 355-nm laser drilling...
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