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This study implements the optical-based gas sensor array design using the TSMC 0.35μm 2P4M standard CMOS process. The gas concentration is detected based on the fluorescence intensity (with high specificity) measured by the proposed sensor. This design has four merits: (1) integration of multiple photo-sensors, thermal-isolation structure, and optical based gas-sensing films using CMOS and polymer...
This study implements the CMOS-MEMS Fabry-Perot interferometer (FPI) with tunable resonant cavity. Using standard TSMC 0.35μm 2P4M CMOS process, the features of this design are as follows, (1) two optical resonant cavities are provided by the transparent oxide layer and air-gap, (2) oxide thickness is determined by post-CMOS etching process, (3) tunable gap can be controlled by integrated CMOS circuit,...
A fully differential CMOS-MEMS square-plate oxide (SiO2) resonator with embedded polysilicon (PolySi) electrodes fabricated using a conventional 0.35 μm CMOS process has been demonstrated with Q > 4,000 and motional impedance Rm of 67.3 KΩ at 6.89 MHz. The key to attaining such performance involves leveraging high-Q materials such as SiO2 and PolySi available from the CMOS back-end-of-line stacks...
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