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For solar cells on low cost glass substrates a thickness of 20 /spl mu/m of a poly silicon film is sufficient as light absorber. Efficient deposition rates for the absorber up to 300 nm/min are achieved by means of a PECVD process in a mixture of trichlorosilane and hydrogen. For in-situ p-doping boron trichloride is added. An adjacent thin graphite layer is realized in the same plasma reactor by...
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