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Heterojunction silicon wafer solar cells, using a microcrystalline silicon (μc-Si:H) thin-film emitter and a very thin intrinsic amorphous silicon (a-Si:H) passivation layer between the crystalline silicon wafer and the emitter layer, have been reported to exhibit stable performance and high efficiency. Desired properties for the emitter layer include wide bandgap, low surface and interface recombination,...
Heterojunction silicon wafer solar cells using an intrinsic amorphous silicon (a-Si:H) thin-film passivation layer between the crystalline c-Si substrate and the thin-film emitter layer have proven to be a viable device structure for high efficiency. While microcrystalline μc-Si:H is a good candidate for the emitter layer due to its high doping efficiency, intrinsic a-Si:H with its low interfacial...
In this work, a novel approach for heterojunction solar cell fabrication, featuring plasma deposited amorphous silicon sub-oxides (a-SiOx:H) for high quality surface passivation combined with plasma deposited doped microcrystalline silicon (?c-Si(n+/p+)) is used to form the heterojunction. Special attention is paid (i) to the front and back surface passivation of the bulk material by high-quality...
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