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Deep levels in solid-source MBE-grown n- and p-type (Al0.09Ga0.91)0.51In0.49P are investigated using deep level transient spectroscopy (DLTS). These results are correlated with background oxygen impurities measured by secondary ion mass spectroscopy and electrical properties using Hall effect. Oxygen impurity concentration is found to depend weakly on substrate offcut conditions in MBE-grown AlGaInP...
Sb-heterostructure backward diodes have proven to be a strong contender for millimeter-wave direct detection applications, primarily due to their high sensitivity, low noise and high frequency response. It has been shown that thinning the AlSb barrier thickness (from 32 A to 11 A) greatly reduced the junction resistance (Rj) and thus the associated Johnson noise. However this lowered the curvature...
Schrodinger equation and Poisson equation are solved self-consistently for Al0.5Ga0.5N/GaN heterojunctions grown along the c axis, then the distribution of electrons and the exact energy of all the bounded states confined in heterojunctions are gotten, and the electrons are found to take up the first two subbands. Considerable magnitude of Rashba spin splitting for the first subband at the Fermi level...
The state of the art in millimeter-wave detection and imaging using Sb-heterostructure detectors has been advanced recently with demonstration of excellent low-noise performance through the use of very thin (< 15 Aring) tunnel barriers. This reduction in tunnel barrier thickness improves the noise by reducing the thermal noise associated with the junction resistance, Rj. However, the thinner barrier...
Detailed characterization of the low-frequency noise performance of mm-wave Sb- heterostructure detectors and the implications for devices and systems are reported. The low-frequency noise as a function of temperature and bias was characterized. While the detectors exhibit only thermal noise at zero bias, the application of either external DC bias or the generation of a self-bias from incident RF...
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