The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A GaAs power m.e.s.f.e.t. with a new structure has been developed, which allows extremely reduced source inductances and minimised thermal resistance. In the structure, the chip, with metal posts plated on the source, drain and gate pads, is connected directly to the package with no wire. The best results obtained were 2.5 W at 15 GHz and 4.1 W at 12 GHz.
High-power GaAs field-effect transistors were fabricated on molecular-beam epitaxial GaAs crystals. Devices with a power output at 1 dB gain compression of 4.0 W, a corresponding linear gain of 5.4 dB and a power-added efficiency as high as 35% have been realised.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.