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We have investigated the ordering of germanium islands on a relaxed uniform Si 0.84 Ge 0.16 buffer layer by atomic force microscopy and transmission electron microscopy. A pronounced ordering with the islands situated along dislocation slip band lines was observed. The resemblance of this ordering to the ordering obtained with compositionally graded buffer...
The ability of dislocation patterns to control the lateral distribution of islands on the surface of strained heteroepitaxial systems is elucidated. We have studied the behaviour of Ge deposited on a Si surface modified by misfit dislocations generated in buried compositionally graded Si 1-x Ge x layers. A pronounced ordering of the Ge islands on the dislocation-structured...
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