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We report a magnetization study of stoichiometric ErN nanocrystalline films grown on Si and protected by a GaN passivating layer. According to the temperature dependence of the resistivity the films are heavily doped semiconductors. Above 100K the magnetization data fit well to a Curie–Weiss behavior with a moment expected within the free-ion Er3+ J=152 multiplet. Below 50K the Curie–Weiss plot steepens...
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