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Wide dynamic range (DR) CMOS image sensors featuring a lateral overflow integration capacitor in a pixel, which locates next to the floating diffusion and integrates the overflow photoelectrons from the fully depleted photodiode in the same integration term, have been developed. The DR has been extended to 100 dB in a single exposure by adding the minimum number of the circuit elements to the four...
The wide DR CMOS image sensor incorporates a lateral overflow capacitor in each pixel to integrate the overflow charges from the photodiode when it saturates. The 7.5/spl times/7.5 /spl mu/m/sup 2/ pixel, 1/3" VGA sensor fabricated in a 0.35 /spl mu/m 3M2P CMOS process achieves a 100 dB dynamic range with no image lag, 0.15 mV/sub rms/ random noise and 0.15 mV fixed pattern noise.
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