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A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically...
In this paper, we have explored the memory effect on the performance of the p-channel HfO2 nanocrystal trapping layer of SONOS-type flash memories. Band to Band hot electron injection and channel hot hole was employed for programming and erasing, respectively. The proposed p-channel SONOS-type HfO2 nanocrystal flash memory exhibits large memory windows, high program/erase speed, good endurance, and...
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