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The thermal stability of the Ti/Al, Ti/Al/Ni/Au, Cr/Al and Cr/Al/Ni/Au ohmic contact metallizations on n-GaN were investigated. Bilayers of Ti/Al and Cr/Al, with and without Ni/Au overlayers, were deposited on n-GaN using an e-beam deposition method and ohmic contacts formed by a vacuum annealing technique. For both the Ti/Al and Ti/Al/Ni/Au minimum specific contact resistivities of ~1x10 - ...
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