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The direct current (dc) conductivity of Al(GeSGa)Al samples has been investigated at high applied electric fields up to 1 · 10 8 V m −1 at room temperature, and the electrical transport in the thermionic and thermionic-field emission modes. From the current-voltage characteristics, the values of the electron work function χ at the Al/GeSGa interface, the relative dielectric permittivy...
The d.c. conductivity of Al (GeSe 5 ) 1-x Tl x Al thin film samples (0 < x < 20 at.%) has been investigated at high applied electric fields up to 1.10 8 V m -1 at room temperature. From the current-voltage characteristics, the values of the work function at the Al GeSeTl interface (X = 0.84 eV), the relative dielectric permittivity of...
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