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The effect of ion beam mixing on the formation of tantalum-silicon contacts was studied. Silicon implantation into 50 nm Ta layers on n + -Si (100) was carried out at temperatures from 150 to 500 o C and fluences between 1x10 15 and 1x10 17 Si/cm 2 . The microstructural changes were characterized by Auger electron spectroscopy, X-ray diffraction and...
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