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TaC x N y films were characterized and evaluated for suitability as copper diffusion barriers for advanced interconnect structures. Films were deposited from pentakis(dimethylamino)tantalum, Ta[N(CH 3 ) 2 ] 5 , and methane by thermal chemical vapor deposition (CVD) at 365 o C and plasma enhanced CVD (PECVD) at 185-245 o C. Film composition was...
Tungsten carbide films were grown by chemical vapor deposition using W(CO) 6 and C 2 H 4 between 250 and 450 o C. Pyrolysis studies indicate W(CO) 6 thermally decomposes over the 150-200 o C temperature range with or without ethylene. Carbon incorporation increased from 13 to ~33% when C 2 H 4 was co-fed with W(CO) 6 . The W/C...
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