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The interface between Cu and HfO 2 synthesized using physical vapor deposition at 300 K has been examined with in situ low-energy ion scattering (LEIS), in situ X-ray photoelectron spectroscopy (XPS) and ex situ scanning transmission electron microscopy (STEM). Cu deposited on HfO 2 at 300 K readily forms three-dimensional clusters. LEIS and XPS data show that the Cu is not oxidized...
The interface between Cu and HfSiO 4 films synthesized using physical vapor deposition (PVD) at 300K has been examined with in situ low-energy ion scattering (LEIS), in situ X-ray photoelectron spectroscopy (XPS), and ex situ atomic force microscopy (AFM). Cu deposited on HfSiO 4 at 300K is adequately described by a two stage model in which a single layer forms up to ~85% of completion,...
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