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We propose a new laser annealing process for forming P-Base-Junction P-Base-Junction (Here, P represents the type of impurity) in the trench gate power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). An equivalent shallow junction structure for P-Base-Junctionwith uniform impurity distribution is achieved by the green laser annealing process of pulse mode. By comparing the laser annealing...
Significant physical challenges remain for CMOS technology to increase Ion and decrease Ioff as transistor dimension and power supply voltages continue downscaling. For Ioff, a physical barrier exists as exhibited in the subthreshold slope SS = |(δVg)/(δlnId) | = ln10 ▪ kBT/q, which is limited to > 60 mV/dec at room temperature due to electron thermal distribution. To circumvent this fundamental...
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