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We present a systematic approach to formulating chemical mechanisms to chemical vapor deposition processes with the unusually large growth rate enhancement observed for in situ B doping of Si as a case study. The basic computational tools needed for mechanism development; quantum chemistry calculations, sensitivity analysis, and finite element simulations are combined to develop a mechanism for the...
The ability of dislocation patterns to control the lateral distribution of islands on the surface of strained heteroepitaxial systems is elucidated. We have studied the behaviour of Ge deposited on a Si surface modified by misfit dislocations generated in buried compositionally graded Si 1-x Ge x layers. A pronounced ordering of the Ge islands on the dislocation-structured...
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