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An assessment of the radiation tolerance of the latest generation IBM silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies (SiGe 8WL and SiGe 8HP) at extreme dose/fluence is reported. These BiCMOS technologies are of great interest for analog readout circuits in high energy physics detectors, especially the planned upgrade of the ATLAS detector for the upgraded Large Hadron...
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