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Deep diffusion of dopants in Si 001 requires temperature annealing as high as 1250°C and more for several days, in a quasi-neutral atmosphere. We have shown that such thermal treatment strongly affects the surface morphology, creating several-micrometers long, 10–50 nm deep square-shaped pits faceted along the 110 directions, with a density of ∼10 defects/cm2 for a 50-h anneal. These kind of defects,...
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