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A non-volatile memory (NVM) exploiting single-layer graphene (SLG) as a channel material has been fabricated through low temperature processes below 250°C and characterized for the first time. The injection of electrons into the trap sites of a triple high-k dielectrics stack results in a memory window of more than 9.0V. The NVGMs fabricated by processes compatible with flat panel display (FPD) can...
A new CuxSiyO resistive memory, which is different from Cu-doped SiO2 or CuxO binary oxide, is integrated successfully in standard logic technology for the first time. Key breakthrough is that data retention (10 years@ 150°C), resistance distribution (with 50x window@125°C ) and disturbance immunity significantly improved with integration simplicity advantage, as demonstrated on a 1Mb test chip. The...
A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and retention performance of greater than 104 s. The analysis of the device I-V characteristics suggests the source of the observed switching effects to be the redox-induced ligand...
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