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The structural integrity on the low-k layers is a major reliability concern on three dimensional packaging technology. Because low-k materials used in dies have a reduced stiffness and adhesion strength to the barrier materials, making the BEOL much more vulnerable to externally applied thermal mechanical stress due to packaging. The stress problem due to differences in dimension and material properties...
The microelectronics industry faces important challenges in reducing technology development and circuit design times. This advocates the use of TCAD approaches to co-optimize circuits and device development. This paper presents the process of calibrating pMOSFET TCAD simulations against measured devices starting with the physical structure, and the doping distribution and achieving good matching of...
A position sensor is required in a Permanent magnet synchronous machines(PMSM) system, which will raise cost and reduced reliability. Sensorless control of PMSM drive overcome these difficul-ties. In the start-up control of sensorless PMSM, may cause a starting failure due to unknown rotor initial position[1].a voltage pulse injection method based on magnetic saturation effect has been proposed[2]...
This paper reports modeling the hot-carrier-induced reliability of poly-silicon thin film transistors (poly-Si TFT). In the damage region near the drain of the poly-Si TFT, using the tail-state-density-dependent mobility model as for the amorphous silicon TFT model, the tail state density model of the test device after stress, as a function of the stress time has been built; which is the key in modeling...
A novel micromachined thermopile IR detector module with filter and detector cointegrated by wafer level Au-Au vacuum bonding is presented in this paper. Filter is directly bonded on the IR detector to miniaturize the detector module, as well as reduce the packaging cost. Because the gas convection will be eliminated in vacuum, a better thermal isolation can be achieved for the vacuum packaged IR...
We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4 × 1013 cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show that the technology can be used in a wide range of applications including embedded processing.
In this contribution, results of our work on reliability issues of ultra-thin poly- and single crystalline silicon layers on thin polyimide substrates under mechanical deformations is presented. By embedding the ultra-thin silicon layers into a thin flexible polyimide substrate and patterning of silicon into square or hexagonal segmentations, an increased mechanical flexibility and resistance against...
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