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While gallium nitride (GaN) is attracting broad attention as the wide bandgap material of choice for both industrial and defense applications, thermal impediments present a significant barrier to full exploitation of its inherently high electron sheet charge density and electrical breakdown voltage. For the last four years, the Defense Advanced Research Projects Agency (DARPA) has pursued research...
Near-junction thermal management is critical to achieving the promise of electronic and photonic devices using wide bandgap materials. In such devices, including GaN HEMTs in PAs, the thermal resistance associated with the "near-junction" region dominates the heat removal path and is often as large as the thermal resistance of all the other elements in the resistance chain. As part of DARPA's...
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