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Al 2 O 3 films were deposited on thermally oxidized Si(100) substrates by ion beam enhanced deposition (IBED), and then implanted with 120keV Er ions. A thermal anneal at 773-1273K in Ar environment was performed for 1h for each sample studied. Photoluminescence and optical transmission spectra of all samples were measured with optical spectrometer Nicolet 860. Annealed at 973K, the...
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