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This paper investigates the total ionizing dose (TID) response of nanoscaled field-effect transistors (FET) made of silicon multiple-gate nanowire (NW). The NWFET architecture relies on its remarkable electrostatic properties to push “silicon”-based technologies much deeper into device scaling than present FinFETs. However, as commonly observed when a new device or technology concept is proposed,...
This paper investigates the Total Ionizing Dose (TID) response of nanoscaled Tri-Gate Field-Effect Transistors (FET) made of silicon multiple-gate NanoWire (NW). The NWFET architecture relies on its remarkable electrostatic properties to push "silicons-based technologies much deeper into device scaling than present FinFETs. But as commonly observed when a new device or technology concept is proposed,...
The SOI technology has already demonstrated intrinsic resistance to transient radiation effects due to the dielectric isolation provided by the buried oxide. But this special feature raises questions about their Total Ionizing Dose (TID) sensitivity, particularly in Fully Depleted (FD) SOI and multiple-gate devices. This paper thus gives an overview of recent advances in radiation effects on innovative...
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