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Highly phosphorous-doped nanowires in silicon (Si:P NW) represent the ultimate nanowire scaling limit of 1 atom thickness and a few atoms width. Experimental data are compared to an atomistic full-band model. Charge-potential self-consistency is computed by solving the exchange-correlation LDA corrected Schrödinger-Poisson equation. Transport through donor bands is observed in Si:P NW at low temperature...
An important driving force behind the microelectronics industry is the ability to pack ever more features onto a silicon chip, by continually miniaturising the individual components. However, after 2015 there is no known technological route to reduce devices below 10 nm. We demonstrate a complete fabrication strategy towards atomic-scale device fabrication in silicon using phosphorus as a dopant in...
Molecular dynamics (MD) simulations of solid-phase epitaxial growth of (001)silicon has already been performed in the literature in order to investigate the atomistic structure of the interface, the processes at the interface and the growth rate. For this purpose MD cells with about 10 3 Si atoms were used. In this paper, the topological structure of the amorphous Si/(001)Si interface and...
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