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The unique wide bandgap properties of SiC allow the creation of high performance normally-off vertical JFET power device. Due to the vertical nature of the device, it can easily be designed with blocking capability exceeding 2kV with RDS(ON), sp > 3mΩ-cm2, resulting in the lowest specific on-resistance for enhancement mode SiC devices with VBR <; 1200V. The low RDS(ON), sp yields a small die...
Normally-OFF SiC VJFETs have been proved to be advantageous as a ??drop-in?? replacement of MOSFETs and IGBTs in a variety of applications. As this device's acceptance continues to grow, developers are investigating optimized driver methods that will yield the best possible switching performance leading to higher system efficiencies. This paper presents new results for an alternative and more optimized...
Conventional wisdom that the SiC JFET is only a normally on device has recently been superseded by the first practical normally off SiC JFET. This new true enhancement mode, three-terminal, pure-SiC design provides designers with a normally off solution that retains all the benefits of the normally on SiC JFET. With only a simple change in series gate impedance, the EM SiC JFET can be used with common...
The normally off silicon carbide power vertical JFET (VJFET) can perform the role of switch, rectifier, or switch with anti-parallel rectifier. This innovative feature eliminates the need to qualify a separate diode that can withstand the rugged environment of, for example, the surface of Venus on-board a surface planetary probe, or that can be derated to exhibit high-reliability in merely harsh terrestrial...
Even though there is increasing interest in silicon carbide (SiC) JFETs, the fact that they are most commonly normally on devices intimates some designers. Therefore it is important that appropriate gate driver circuits are also introduced to ease the negative concerns associated with a normally on device. By introducing inherently safe gate driver circuits specially designed for the SiC JFET, it...
The potential increased power density and high temperature capability of silicon carbide makes it an ideal candidate for use in future hybrid electric vehicle (HEV) technology. A secondary cooling system is required to maintain an 85degC base plate temperature for silicon based power electronics; but by creating a silicon carbide (SiC) based replacement this requirement could be relaxed. One anticipated...
A new generation of power semiconductor devices is emerging based on the maturation of semiconducting silicon carbide. In this paper, alternatives to the divider resistors are presented using newly available 600-V, 2-A SiC JFETs. Two configurations are possible. The first employs a series combination of JFETs with shorted gate-source terminals operating as current limiting diodes. This allows a greater...
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