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In this paper, a 200 nm n-channel inversion-type self-aligned In0.53Ga0.47As MOSFET with a Al2O3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and drain regions. The 200 nm gate-length MOSFET with a gate oxide thickness of 8 nm features the transconductance...
This work shows that charge trapping and detrapping in the gate oxide, which produce low-frequency noise in the drain current of MOSFET's in the classical transport regime, disappear when quantum transport becomes important. In this latter regime, a new type of low frequency fluctuations is observed.
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