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We report on a capacitive resonant sensor with an oxide-nitride (ON) layer used as charge trap. The main idea is that we intentionally inject charges into the ON layer by biasing the device for 30 s with 160% of the pull-in voltage. We use a capacitive micromachined ultrasonic transducer (CMUT) to demonstrate this idea. The CMUT is fabricated via high temperature assisted direct wafer bonding after...
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