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Spin Transfer Torque Magnetic Random Access Memory (MRAM) possesses a unique combination of high speed, high endurance, non-volatility, and small cell size. Among the emerging new memory technologies, including phase change memory, resistive random access memory, and conductive bridging random access memory, Spin Transfer Torque MRAM is the only candidate with the potential for unlimited endurance,...
For the first time, Ge CMOS with all thermal processes performed by microwave annealing (MWA) has been realized. The full MWA process is under 390 oC. It significantly outperforms conventional rapid thermal annealing (RTA) process in 3 aspects: (1) Diffusion-less junction: for easily diffused n-type dopant, phosphorous (P), the ion implantation dopant profile after the MWA activation process remains...
The characteristics of a thermopile made of n-poly-SiC/p-poly-Si junctions are investigated and compared with conventional n/p-poly-Si and Al/p-poly-Si thermopiles. The n-poly-SiC/p-poly-Si thermopile has the highest output voltage (~8 mV with 360 mW heater power) and exhibits a lower contact resistance than an identical thermopile fabricated from n/p-poly-Si. Also significant is that the n-poly-SiC/p-poly-Si...
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