The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The integration of III-V compound semiconductors and silicon (100) CMOS technologies has been a long pursued goal. A robust low-cost heterogeneous integration technology would make the outstanding analog and mixed-signal performance of compound semiconductor electronics available on an as-needed basis to realize key functions on VLSI chips that are difficult to implement in Si technology. In this...
In this paper, we present the latest advancements of short gate length InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) devices that have achieved extremely high extrapolated Fmax above 1 THz. The high Fmax is validated through the first demonstrations of sub-MMW MMICs (s-MMICs) based on these devices including the highest fundamental transistor oscillator MMIC at 347 GHz and the highest...
We report a compact hybrid photonic-integrated optical device consisting of AlGaInAs/InP electroabsorption modulators and a four-arm silica-on-silicon planar lightwave circuit optical interferometer. We use the device to generate 50-Gb/s NRZ-DQPSK signal with excellent performances comparable to those of the commercial lithium niobate DQPSK modulators, while requiring only 2.5Vpp drive signals.
In this paper, we present the latest advancements of sub 50 nm InGaAs/lnAIAs/lnP high electron mobility transistor (InP HEMT) devices that have achieved extrapolated Fmax above 1 THz. This extrapolation is both based on unilateral gain (1.2 THz) and maximum stable gain/maximum available gain (1.1 THz) extrapolations, with an associated fT of 385 GHz. This extrapolation is validated by the demonstration...
-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance and manufacturability can be enhanced. In this work, we have demonstrated excellent DC and RF uniformity...
We performed a degradation study of high-brightness Nichia single-quantum well AlGaN-InGaN-GaN green light-emitting diodes (LEDs). The devices were subjected to high current electrical stress with current pulse amplitudes between 1 A and 7 A and voltages between 10 V and 70 V with a pulse length of 100 ns and a 1 kHz repetition rate. The study showed that when the current amplitude was increased above...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.