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A set of standard and oxygenated silicon diodes with different resistivities (1 and 15kΩcm) was irradiated with neutrons to fluences up to 2x10 14 cm -2 , 1MeV neutron NIEL equivalent. After beneficial annealing the signal response from the diodes was studied using transient current technique. Red laser (λ=670nm) illumination was used for creation of electrons and holes....
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