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For the first time, embedded Si:C (eSi:C) was demonstrated to be a superior nMOSFET stressor compared to SMT or tensile liner (TL) stressors. eSi:C nMOSFET showed higher channel mobility and drive current over our best poly-gate 45 nm-node nMOSFET with SMT and tensile liner stressors. In addition, eSi:C showed better scalability than SMT plus tensile liner stressors from 380 nm to 190 nm poly-pitches.
We report a successful implementation of epitaxially grown Phosphorus-doped (P-doped) embedded SiC stressors into SOI nMOSFETs. We identify a process integration scheme that best preserves the SiC strain and minimizes parasitic resistance. At a substitutional C concentration (Csub) of ~1.0%, high performance nFETs with SiC stressors demonstrate ~9% enhanced Ieff and ~15% improved Idlin against the...
This paper presents for the first time (110) PMOS characteristics without Rext degradation, allowing investigation of fundamental mobility and demonstration of drive current Ion in excess of 1mA/mum at Ioff =100 nA/μm.
In this paper, we quantify the relation of low lateral electric field hole mobility and channel strain to the virtual source velocity of nanoscale p-type SOI MOSFET devices with effective channel length from 35 to 50 nm and show strong correlation. The mobility is modified by the application of uniaxial compressive strain in the I GPa regime to the channel by employing two stressors-(1) embedded SiGe...
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