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We report on recent developments of an “at wavelength” full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet lithography (EUVL). Our approach uses photoemission electron microscopy (PEEM) in a near normal incidence mode at 13.5nm wavelength to image the photoemission induced by the EUV wave field on the multilayer blank surface. We analyze buried defects...
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