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RuTa(N) film has been prepared by doping N in Ru-Ta alloy and investigated its use as a barrier layer against Cu diffusion in Cu interconnects. It was found that RuTa(N) has a poor barrier property against Cu in the BEOL process, since N in Ru-Ta alloy is desorbed and RuTa(N) is recrystallized by heat treatment. It was also shown that RuTa(N) has inferior reliability due to its poor wettability with...
We developed a new simple X-ray scattering method for determining the pore size distribution in porous low-k film on silicon substrate without the destruction of the low-k film. We succeeded to observe the tungsten in porous MSQ (Methyl Silses Quioxane) film by TEM after the filling of tungsten into the pores by tungsten chemical vapor deposition (CVD). Furthermore, we compared this Small Angle X-ray...
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