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Improved device linearity for low-noise applications has been demonstrated in 0.25-μm AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) using atomic-layer-deposited (ALD) Al2O3 as gate dielectric. The measured dc transconductance, microwave small signal, and noise performance feature less dependence on drain current as compared to conventional Schottky-gate AlGaN/GaN...
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