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Silicon carbide ingots were grown by a sublimation method, also called the modified Lely method. The modeling and simulation of heat and mass transfer during the growth of single crystals and the characterization tools used, mainly X-ray imaging, polarized light microscopy, and Raman spectroscopy imaging, are described in this paper. These are powerful tools for a better understanding of the process...
To overcome some of the problems in SiC crystal growth, modeling can now be considered as a reliable engineering tool in research, development and production of electronic materials. There is a multitude of physical phenomena in the sublimation growth process. Only a partial modeling of the whole process can be made even by the most ambitious researcher. The main objective is to reach an accurate...
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