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Capacitance–voltage (C–V) profiling has been used to study the interface properties and apparent doping profile of NiSi/strained-Si heterostructure Schottky diodes. The interface states have been characterized using the capacitance–voltage (C–V) and capacitance–frequency (C–f) techniques for diodes annealed at 400 and 600°C. Based on the depletion approximation and interfacial layer with interface...
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