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Scanning tunneling microscopy (STM) and high-resolution low-energy electron diffraction techniques are used to determine the characteristics of the two-dimensional Si island distribution on defect-free and imperfect Si(111) surfaces in real space and reciprocal space. The surface power spectra of STM and modeling of diffraction profiles give consistent island separation. Unlike the submonolayer nucleation...
Series of silicon films were grown by thermal evaporation on Si(111) substrates at temperatures between ~240 o C and ~500 o C under ultrahigh-vacuum conditions, and examined with scanning tunneling microscopy. Two series of films grown at ~240 o C and ~400 o C showed a trend toward multilayer root-mean-squared (rms) roughness as thicknesses of tens to hundreds of bilayers...
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