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The effect of various biasing conditions and temperature on third order two-tone intermodulation distortion characteristics of InGaP/GaAs microwave DHBTs is studied. The experimental results indicated that the variations in the third order nonlinearity characteristic dip are mainly due to changes in the DC current gain of the device at a fixed and relatively low collector current. Changes in the AC...
The effect of temperature (-25 to 100 /spl deg/C) on two-tone intermodulation distortion (IMD) characteristics of InGaP/GaAs microwave DHBTs is studied. This is carried out through measurement with the results being compared to a simple analytical technique. The results indicated that varying the temperature has a significant impact on the IMD characteristics. The variations of small signal parameters...
In this study, the mechanism for the unique minority-carrier injection-enhanced annealing phenomena and the origin of the major radiation-induced defect in InGaP top cell materials are discussed in comparison with InP. The optimal design for the InGaP base layer thickness of the InGaP/GaAs 2-junction cells for current matching at EOL is examined. It is also found that the radiation tolerance of InGaP/middle...
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