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Photoresponse of GaAs-based double-heterojunction phototransistors (DHPTs), in surface-illuminated orientation, has been analyzed with a modified small-signal model. The effect of incident optical illumination on various intrinsic parameters has been discussed for In0.49Ga0.51P/GaAs N+p+N− DHPT. Since the primary detecting material is GaAs, the device is optimized to detect short wavelength at 850...
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