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Si-Ge superlattice structures have been prepared by Molecular Beam Epitaxy (MBE) and investigated using X-Ray scattering techniques. The satellite peaks occurring in X-Ray reflectivity and X-Ray diffraction give information about the periodicity of the superlattice. Calculations of the dynamical diffraction reveal that the Ge layer is under compressive strain.
The performance enhancement in strained-Si n-MOSFETs are evaluated as a function of temperature. Mobility modeling at low temperature is reported. SPICE parameters are extracted for strained-Si n-MOSFETs for the first time.
Device simulation has been used to study the performance enhancement prediction for buried SiGe-channel p-MOSFETs. Steady state self-heating is modeled via the inclusion of thermal-flow analog auxiliary sub-circuits.
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