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Potential of high-k dielectric films for future scaled charge storage non-volatile memory (NVM) device applications is discussed. To overcome the problems of charge loss encountered in conventional flash memories with silicon-nitride (Si 3 N 4 ) films and polysilicon-oxide-nitride-oxide-silicon (SONOS) and nonuniformity issues in nanocrystal memories (NC), such as Si, Ge and metal,...
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