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Scaled 100-nm gate length SONOS memory devices with a nitride layer embedded in the gate stack is studied using Technology CAD (TCAD). The program and erase states of the device are simulated. Long-term (10-year) charge retention capabilities of the SONOS structure are predicted.
Results of high frequency performance studies using technology CAD (TCAD) of process-induced strain- engineered n-MOSFETs with channel lengths down to 40 nm is reported. Uniaxial tensile stress induced in the channel using stressed contact liners were found to significantly improve ac performance, predicting a maximum oscillation frequency, fmax as high as 450 GHz. A record high cutoff frequency,...
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